Anterwell Technology Ltd.

          Anterwell Technology Ltd.

 

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Home ProductsPower Mosfet Transistor

SECOND GENERATION Power Mosfet Transistor STW21NM60N N-CHANNEL 600V 0.19 Ω - 17 A

Good quality Programmable IC Chips for sales
Good quality Programmable IC Chips for sales
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SECOND GENERATION Power Mosfet Transistor STW21NM60N N-CHANNEL 600V 0.19 Ω - 17 A

China SECOND GENERATION Power Mosfet Transistor STW21NM60N N-CHANNEL 600V 0.19 Ω - 17 A supplier

Large Image :  SECOND GENERATION Power Mosfet Transistor STW21NM60N N-CHANNEL 600V 0.19 Ω - 17 A

Product Details:

Place of Origin: original factory
Brand Name: anterwell
Certification: new & original
Model Number: STW21NM60N

Payment & Shipping Terms:

Minimum Order Quantity: 10pcs
Price: Negotiate
Packaging Details: Please contact me for details
Payment Terms: Western Union, T/T, MoneyGram
Supply Ability: 5000pcs
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Detailed Product Description
Vdss: 600V Electric Current: 17A
Power Max: 140W PACKING: TO-247-3
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STW21NM60N N-CHANNEL 600V 0.19 Ω - 17 A SECOND GENERATION MOSFET

 

General Features

 

SECOND GENERATION Power Mosfet Transistor STW21NM60N N-CHANNEL 600V 0.19 Ω - 17 A

 

■ 100% AVALANCHE TESTED

■ LOW INPUT CAPACITANCE AND GATE CHARGE

■ LOW GATE INPUT RESISTANCE

 

 

DESCRIPTION

 

The STx21NM60N is realized with the second generation. This revolutionary MOSFET associates a new vertical structure to the Company's strip layout to yield one of the world's lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters

 

 

APPLICATIONS  

 

It's very suitable for increasing power density of high voltage converters allowing system miniaturization and higher efficiencies.

 

 

 

SECOND GENERATION Power Mosfet Transistor STW21NM60N N-CHANNEL 600V 0.19 Ω - 17 A

 

 

Table 2: Order Codes

 

SALES TYPE MARKING PACKAGE PACKAGING
STB21NM60N B21NM60N D2PAK  TAPE & REEL
STB21NM60N-1 B21NM60N I 2PAK TUBE
STF21NM60N F21NM60N TO-220FP TUBE
STP21NM60N P21NM60N TO-220 TUBE
STW21NM60N W21NM60N TO-247 TUBE

 

 

 

Table 3: Absolute Maximum ratings

 

Symbol Parameter Value Unit
    TO-220 / D2PAK / I 2PAK / TO-247 TO-220FP  
 
VDS Drain-source Voltage (VGS = 0)                          600  V
VDGR Drain-gate Voltage (RGS = 20 kΩ)                          600  V
VGS Gate- source Voltage                          ±25  V
ID Drain Current (continuous) at TC = 25°C 17 17 (*)   A
ID Drain Current (continuous) at TC = 100°C 10 10 (*) A
IDM () Drain Current (pulsed) 64 64 (*) A
PTOT Total Dissipation at TC = 25°C 140 30 W
  Derating Factor 1.12 0.23 W/°C
dv/dt(1) Peak Diode Recovery voltage slope                             15 V/ns
Viso Insulation Winthstand Voltage (DC)                           -----   2500  V
Tstg Storage Temperature                 –55 to 150 150  °C
Tj Max. Operating Junction Temperature

() Pulse width limited by safe operating area

(*) Limited only by maximum temperature allowed

(1) ISD ≤ 16 A, di/dt ≤ 400 A/µs, VDD=80% V(BR)DSS

 

 

Table 4: Thermal Data

 

    TO-220 / D²PAK / I²PAK / TO-247 TO-220FP  
Rthj-case Thermal Resistance Junction-case Max 0.89 4.21 °C/W
Rthj-amb Thermal Resistance Junction-ambient Max                   62.5  °C/W
Tl Maximum Lead Temperature For Soldering Purpose                    300 °C

 

 

 

Table 5: Avalanche Characteristics

 

Symbol Parameter Max Value Unit
IAS Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max)     8.5  A
EAS Single Pulse Avalanche Energy (starting Tj = 25 °C, ID = IAS, VDD = 50 V)    610 mJ

 

 

 

 

 

 

 


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LTC1650CN#PBF 12500 17+ PDIP
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LTC1657IGN#PBF 12500 17+ SSOP
LTC1657LCGN#TRPBF 12500 17+ SSOP
LTC1657LIGN#TRPBF 12500 17+ SSOP

 

Contact Details
Anterwell Technology Ltd.

Contact Person: Miss. Sharon Yang

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