Anterwell Technology Ltd.

          Anterwell Technology Ltd.

 

Large Original stock of IC Electronics Components, Transistors, Diodes etc.

High Quality, Reasonable Price, Fast Delivery.

Home
Products
About Us
Factory Tour
Quality Control
Contact Us
Request A Quote
Home ProductsPower Mosfet Transistor

IRF7240TRPBF Power Mosfet Transistor high power mosfet transistors

Good quality Programmable IC Chips for sales
Good quality Programmable IC Chips for sales
We have cooperate with Anterwell near 7 years. always very good quality good service. Original and very fast delivery. A very good partner.

—— Clemente From Brzail

I'm doing business with Anterwell from 2006, from small to big orders. Reliable!

—— Ingalill From Sweden

Sharon is a very good girl, we are very happy to cooperate with her. Competitive price and professional. Never have quality problem with them.

—— Alfredo From USA

We always buy XILINX parts from Anterwell. High quality with good price. Hope can have more business with you.

—— Mr Babak From Iran

I'm Online Chat Now

IRF7240TRPBF Power Mosfet Transistor high power mosfet transistors

China IRF7240TRPBF Power Mosfet Transistor high power mosfet transistors supplier

Large Image :  IRF7240TRPBF Power Mosfet Transistor high power mosfet transistors

Product Details:

Place of Origin: original factory
Brand Name: Anterwell
Certification: new & original
Model Number: IRF7240TRPBF

Payment & Shipping Terms:

Minimum Order Quantity: 20pcs
Price: Negotiate
Packaging Details: Please contact me for details
Delivery Time: 1 day
Payment Terms: T/T, Western Union, Paypal
Supply Ability: 8600pcs
Contact Now
Detailed Product Description
Drain- Source Voltage: -40 V Continuous Drain Current: -10.5 A
Pulsed Drain Current: -43 A Power Dissipation: 2.5 W
Linear Derating Factor: 20 MW/°C Gate-to-Source Voltage: ± 20 V
High Light:

multi emitter transistor

,

silicon power transistors

 

Stock Offer (Hot Sell)

Part no. Quantity Brand D/C Package
NDT456P 5000 FAIRCHILD 16+ SOP8
OB2268CCPA 5000 OB 16+ SOP8
P2003EVG 5000 NIKOS 13+ SOP8
P6SMB27CA 5000 VISHAY 15+ SMB
P89LPC932A1FDH 5000 NXP 16+ TSSOP
PC400J00000F SOP-5 5000 SHARP 16+ SOP-5
PIC16C711-04/P 5000 MICROCHIP 14+ DIP-18
PIC16F716-I/P 5000 MICROCHIP 14+ DIP-18
PIC16F84A-04I/SO 5000 MICROCHIP 14+ SOP18
PIC16F886-I/SP 5000 MICROCHIP 16+ DIP
PIC18F4431-I/PT 5000 MICROCHIP 16+ TQFPQFP
RFD15P05SM 5000 INTERSIL 13+ TO-252
RT8010GQW 5000 RICHTEK 15+ WDFN
SFH6156-4 5000 VISHAY 16+ SOP4
SI4880DY-T1-E3 5000 VISHAT 16+ SOP-8
SLF6028T-100M1R3-PF 5000 TDK 14+ SMD
SM15T15A 5000 ST 14+ DO-214AB
SM6S24A 5000 VISHAY 14+ DO-218
SMAJ15A 5000 VISHAY 16+ SOD-214A
SMBJ6.0A 5000 VISHAY 16+ SMB
SMCJ54A-E3 5000 VISHAY 13+ DO-214A
SN74AHC123ADR 5000 TI 15+ SOP-16
SN74HC132N 5000 TI 16+ SOP
SN74HC148N TI 0401 5000 TI 16+ SOP-16
ST232ABDR 5000 ST 14+ SMD
ST232CWR 5000 ST 14+ SOP16
STM8S103F2P6 5000 ST 14+ SSOP
STP75NF75 5000 ST 16+ TO-220
STTH1R06U 5000 ST 16+ SMB
STU309D 5000 SAMHOP 13+ SOT-252

 

 

IRF7240PbF

HEXFET Power MOSFET

 

  • Ultra Low On-Resistance 
  • P-Channel MOSFET 
  • Surface Mount 
  • Available in Tape & Reel 
  • Lead-Free

 

VDSS RDS(on) max ID
-40V 0.015@VGS = -10V -10.5A
0.025@VGS = -4.5V -8.4A

 

Description

These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications..

 

The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infrared, or wave soldering technique

 

Absolute Maximum Ratings

  Parameter Max. Units
VDS Drain- Source Voltage -40 V
ID @ TA = 25°C Continuous Drain Current, VGS @ -10V -10.5 A
ID @ TA= 70°C Continuous Drain Current, VGS @ -10V -8.6 A
IDM Pulsed Drain Current -43 A
PD @TA = 25°C Power Dissipation 2.5 W
PD @TA = 70°C Power Dissipation 1.6 W
  Linear Derating Factor 20 mW/°C
VGS Gate-to-Source Voltage ± 20 V
TJ, TSTG Junction and Storage Temperature Range -55 to + 150 °C

 

IRF7240TRPBF Power Mosfet Transistor high power mosfet transistors

 

SO-8 Package Outline

 

Dimensions are shown in millimeters (inches)

IRF7240TRPBF Power Mosfet Transistor high power mosfet transistors

 

SO-8 Part Marking

 

EXAMPLE: THIS IS AN IRF7101 (MOSFET)

IRF7240TRPBF Power Mosfet Transistor high power mosfet transistors

 

SO-8 Tape and Reel

 

Dimensions are shown in millimeters (inches)

IRF7240TRPBF Power Mosfet Transistor high power mosfet transistors

 

 

 

 

 

Contact Details
Anterwell Technology Ltd.

Contact Person: Miss. Sharon Yang

Tel: 86-755-61169882

Fax: 86-755-613169859

Send your inquiry directly to us (0 / 3000)