Anterwell Technology Ltd.

          Anterwell Technology Ltd.

 

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FQP30N06 Power Mosfet Transistor power mosfet ic N-Channel MOSFET

Good quality Programmable IC Chips for sales
Good quality Programmable IC Chips for sales
We have cooperate with Anterwell near 7 years. always very good quality good service. Original and very fast delivery. A very good partner.

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Sharon is a very good girl, we are very happy to cooperate with her. Competitive price and professional. Never have quality problem with them.

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We always buy XILINX parts from Anterwell. High quality with good price. Hope can have more business with you.

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FQP30N06 Power Mosfet Transistor power mosfet ic N-Channel MOSFET

China FQP30N06 Power Mosfet Transistor power mosfet ic N-Channel MOSFET supplier

Large Image :  FQP30N06 Power Mosfet Transistor power mosfet ic N-Channel MOSFET

Product Details:

Place of Origin: original factory
Brand Name: Anterwell
Certification: new & original
Model Number: FQP30N06

Payment & Shipping Terms:

Minimum Order Quantity: 20pcs
Price: Negotiate
Packaging Details: Please contact me for details
Delivery Time: 1 day
Payment Terms: T/T, Western Union, Paypal
Supply Ability: 6900pcs
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Detailed Product Description
Drain-Source Voltage: 60 V Gate-Source Voltage: ± 25 V
Single Pulsed Avalanche Energy: 280 MJ Avalanche Current: 30 A
Repetitive Avalanche Energy: 7.9 MJ Operating And Storage Temperature: -55 To +175 °C
High Light:

multi emitter transistor

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silicon power transistors

 

Stock Offer (Hot Sell)

Part No. Quantity Brand D/C Package
MCIMX535DVV1C 1066 FREESCALE 14+ BGA
MCIMX6S7CVM08AC 769 FREESCALE 16+ BGA
MCP100T-270I/TT 68000 MICROCHIP 15+ SOT23-3
MCP100T-315I/TT 57000 MICROCHIP 16+ SOT23-5
MCP100T-450I/TT 58000 MICROCHIP 10+ SOT23-3
MCP120T-315I/TT 24000 MICROCHIP 14+ SOT-23
MCP1252-33X50I/MS 6935 MICROCHIP 16+ MSOP
MCP1525T-I/TT 22350 MICROCHIP 14+ SOT23-3
MCP1700T-1802E/MB 11219 MICROCHIP 16+ SOT-89
MCP1700T-1802E/TT 17041 MICROCHIP 06+ SOT23-3
MCP1700T-3302E/MB 14911 MICROCHIP 09+ SOT-89
MCP1700T-3302E/TT 87000 MICROCHIP 12+ SOT-23
MCP1700T-5002E/TT 6249 MICROCHIP 16+ SOT-23
MCP1702T-3302E/MB 8308 MICROCHIP 13+ SOT-89
MCP1703T-5002E/DB 6320 MICROCHIP 13+ SOT-223
MCP1825ST-3302E/DB 5514 MICROCHIP 16+ SOT-223
MCP1826T-3302E/DC 6845 MICROCHIP 15+ SOT223-5
MCP2122-E/SN 7708 MICROCHIP 13+ SOP-8
MCP23S17-E/SO 8974 MICROCHIP 15+ SOP-28
MCP2551-I/SN 7779 MICROCHIP 16+ SOP-8
MCP2551T-E/SN 3957 MICROCHIP 16+ SOP-8
MCP3202-CI/SN 5841 MICROCHIP 15+ SOP-8
MCP3202-CI/SN 5770 MICROCHIP 15+ SOP-8
MCP3208-CI/P 8740 MICROCHIP 15+ DIP
MCP3421AOT-E/CH 12828 MICROCHIP 16+ SOT23-6
MCP3422AO-E/SN 3875 MICROCHIP 10+ SOP-8
MCP3424-E/SL 8273 MICROCHIP 16+ SOP-14
MCP3551-E/SN 7817 MICROCHIP 16+ SOP-8
MCP41050T-I/SN 4450 MICROCHIP 11+ SOP-8
MCP41100-I/SN 3572 MICROCHIP 15+ SOP-8

 

 

FQP30N06

60V N-Channel MOSFET

 

General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

 

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as automotive, DC/ DC converters, and high efficiency switching for power management in portable and battery operated products.

 

Features

• 30A, 60V, RDS(on) = 0.04Ω @VGS = 10 V

• Low gate charge ( typical 19 nC)

• Low Crss ( typical 40 pF)

• Fast switching

• 100% avalanche tested

• Improved dv/dt capability

• 175°C maximum junction temperature rating

 

Absolute Maximum Ratings TC = 25°C unless otherwise noted

Symbol Parameter FQP30N06 Units
VDSS Drain-Source Voltage 60 V
ID

Drain Current - Continuous (TC = 25°C)

                    - Continuous (TC = 100°C)

30 A
21.3 A
IDM Drain Current - Pulsed (Note 1) 120 A
VGSS Gate-Source Voltage ± 25 V
EAS Single Pulsed Avalanche Energy (Note 2) 280 mJ
IAR Avalanche Current (Note 1) 30 A
EAR Repetitive Avalanche Energy (Note 1) 7.9 mJ
dv/dt Peak Diode Recovery dv/dt (Note 3) 7.0 V/ns
PD

Power Dissipation (TC = 25°C)

                       - Derate above 25°C

79 W
0.53 W/°C
TJ, TSTG Operating and Storage Temperature Range -55 to +175 °C
TL Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds 300 °C

 

FQP30N06 Power Mosfet Transistor power mosfet ic N-Channel MOSFET

 

 

 

Contact Details
Anterwell Technology Ltd.

Contact Person: Miss. Sharon Yang

Tel: 86-755-61169882

Fax: 86-755-613169859

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