Anterwell Technology Ltd.
Large Original stock of IC Electronics Components, Transistors, Diodes etc.
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Working Frequency: | 50 MHz To 1.5 GHz | VDD POWER: | 5V |
---|---|---|---|
Packaging: | SOT-89-3 | Max Working Temperture: | + 85 °C |
Supply Current: | 220 MA | Factory Packing Quantity: | 1000 |
High Light: | electronics ic chip,integrated circuit components |
TQP7M9105 1W High Linearity Amplifier
Applications
Repeaters
BTS Transceivers
BTS High Power Amplifiers
CDMA / WCDMA / LTE
ISM Equipment
General Purpose Wireless
Product Features
50-1500 MHz
+30 dBm P1dB at 940MHz
+47 dBm Output IP3 at 940MHz
19.5 dB Gain at 940 MHz
+5V Single Supply, 220 mA Current
Internal RF overdrive protection
Internal DC overvoltage protection
On chip ESD protection
SOT-89 Package
General Description
The TQP7M9105 is a high linearity, high gain 1W driver amplifier in industry standard, RoHS compliant, SOT-89 surface mount package. This InGaP/GaAs HBT delivers high performance across 0.05 to 1.5 GHz while achieving +47 dBm OIP3 and +30 dBm P1dB at 940 MHz while only consuming 220 mA quiescent current. All devices are 100% RF and DC tested.
The TQP7M9105 incorporates on-chip features that differentiate it from other products in the market. The amplifier has a dynamic active bias circuit that enable stable operation over bias and temperature variations and can provide a high linearity at back-off operation.
The TQP7M9105 is targeted for use as a driver amplifier in wireless infrastructure where high linearity, medium power, and high efficiency are required. The device an excellent candidate for transceiver line cards and high power amplifiers in current and next generation multi-carrier 3G / 4G base stations.
Absolute Maximum Ratings
Parameter | Rating |
---|---|
StorageTemperature | 65 to 150°C |
Device Voltage, Vcc | +8 V |
RF Input Power CW 50Ω, T=25°C | +30 dBm |
Operation of this device outside the parameter ranges given above may cause permanent damage.
Recommended Operating Conditions
Parameter | Min | Typ | Max | Units |
---|---|---|---|---|
Operating Temp. Range | -40 | +85 | °C | |
Vcc | +5 | +5.25 | V | |
Tj (for>106 hours MTTF) | +170 | °C |
Electrical specifications are measured at specified test conditions. Specifications are not guaranteed over all recommended operating conditions.
Specifications
Test conditions unless otherwise noted: +25°C, +5V Vcc, 50 Ω system, tuned application circuit
Parameter | Conditions | Min | Typ | MAX | Units |
---|---|---|---|---|---|
Operational Frequency Range | 50 | 1500 | MHz | ||
Test Frequency | 940 | MHz | |||
Gain | 17.5 | 19.4 | 20.5 | dB | |
Input Return Loss | 14 | dB | |||
Output Return Loss | 15 | dB | |||
Output P1dB | +28.7 | +30 | dBm | ||
Output IP3 | Pout=+15 dBm/tone, Δf=1 MHz | +43.5 | +47 | dBm | |
WCDMA Channel Power (1) | At -50 dBc ACLR | +20.5 | dBm | ||
Noise Figure | 6.3 | dB | |||
Vcc | +5 | V | |||
Quiescent Current, Icq | 195 | 220 | 245 | mA | |
Thermal Resistance (junction to base) | 27.3 | °C/W |
Notes: 1. ACLR Test set-up: 3GPP WCDMA, TM1+64 DPCH, +5 MHz offset, PAR = 9.7 dB at 0.01% Prob.
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