Anterwell Technology Ltd.
Large Original stock of IC Electronics Components, Transistors, Diodes etc.
High Quality, Reasonable Price, Fast Delivery.
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Continuous Drain Current: | ±21 A | Pulsed Drain Current: | ±84 A |
---|---|---|---|
Gate-source Voltage: | ±30 V | Repetitive Or Non-repetitive: | 21 A |
Maximum Avalanche Energy: | 400 MJ | Maximum Drain-Source DV/dt: | 20 KV/µs |
Operating Temperature: | +150 °C | Storage Temperature Range: | -55 To +150 °C |
High Light: | npn smd transistor,multi emitter transistor |
N-CHANNEL SILICON POWER MOSFET
Features Outline Drawings
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters
Equivalent circuit schematic
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25°C unless otherwise specified)
Item | Symbol | Ratings | Unit | |
Drain-source voltage | VDS | 500 | V | |
VDSX *5 | 500 | V | ||
Continuous drain current | ID | ±21 | A | |
Pulsed drain current | ID(puls] | ±84 | A | |
Gate-source voltage | VGS | ±30 | V | |
Repetitive or non-repetitive | IAR *2 | 21 | A | |
Maximum Avalanche Energy | EAS *1 | 400 | mJ | |
Maximum Drain-Source dV/dt | dVDS/dt *4 | 20 | kV/µs | |
Peak Diode Recovery dV/dt | dV/dt *3 | 5 | kV/µs | |
Max. power dissipation | PD | Ta=25°C | 2.5 | W |
Tc=25°C | 220 | W | ||
Operating and storage temperature range | Tch | +150 | °C | |
Tstg | -55 to +150 | °C |
*1 L=1.67mH, Vcc=50V
*2 Tch 150°C < = <
*3 IF -I <= D, -di/dt=50A/µs, Vcc BV <= DSS, Tch 150°C
*4 VDS 500V
*5 V <= GS=-30V
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