Anterwell Technology Ltd.
Large Original stock of IC Electronics Components, Transistors, Diodes etc.
High Quality, Reasonable Price, Fast Delivery.
Product Details:
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High Side Floating Absolute Voltage: | -0.3 To 625 V | Allowable Offset Supply Voltage Transient: | 50 V/ns |
---|---|---|---|
Junction Temperature: | 150°C | Storage Temperature: | -50 To 150°C |
Lead Temperature (soldering, 10 Seconds): | 300°C | Ambient Temperature: | -40 To 125 °C |
High Light: | electronic integrated circuit,linear integrated circuits |
Stock Offer (Hot Sell)
Part No. | Quantity | Brand | D/C | Package |
LM2662MX | 5344 | TI | 16+ | SOP-8 |
LM2663M | 6856 | NS | 16+ | SOP-8 |
LM2675MX-5.0 | 5274 | TI | 16+ | SOP-8 |
LM2675MX-ADJ | 5415 | TI | 15+ | SOP-8 |
LM2734YMK | 12799 | TI | 16+ | SOT23-6 |
LM2767M5X | 6927 | NSC | 16+ | SOT23-5 |
LM2825N-ADJ | 1525 | NSC | 06+ | DIP-24 |
LM2842YMK-ADJL | 4655 | TI | 16+ | SOT23-6 |
LM285MX-1.2 | 5929 | NS | 16+ | SOP-8 |
LM2901DR2G | 104000 | ON | 13+ | SOP |
LM2902DR2G | 77000 | ON | 15+ | SOP |
LM2903DR2G | 107000 | ON | 15+ | SOP |
LM2903IMX | 13191 | FSC | 11+ | SOP-8 |
LM2904DR2G | 82000 | ON | 16+ | SOP-8 |
LM2904MX | 11700 | NS | 15+ | SOP-8 |
LM2904P | 20000 | TI | 16+ | TSSOP-8 |
LM2904QPWRQ1 | 6065 | TI | 14+ | TSSOP-8 |
LM2907N-8 | 8781 | NS | 97+ | DIP-8 |
LM2917N-8 | 6580 | NS | 13+ | DIP-8 |
LM2931AD-5.0R2G | 19723 | ON | 16+ | SOP-8 |
LM2931CDR2G | 14829 | ON | 16+ | SOP-8 |
LM2931CDR2G | 10000 | ON | 15+ | SOP-8 |
LM2936MPX-3.3 | 9351 | TI | 14+ | SOT-223 |
LM2936Z-5.0 | 3406 | NS | 05+ | TO-92 |
LM2937ESX-3.3 | 9135 | NSC | 07+ | TO-263 |
LM2937IMPX-3.3 | 1862 | TI | 16+ | SOT-223 |
LM2940CSX-5.0 | 8095 | NS | 14+ | TO-263 |
LM2940S-5.0 | 10367 | NS | 16+ | TO-263 |
LM2940SX-5.0 | 8852 | NS | 15+ | TO-263 |
LM2941CT | 5900 | NS | 00+ | TO-220 |
IR21091(S) & (PbF)
HALF-BRIDGE DRIVER
Features
• Floating channel designed for bootstrap operation Fully operational to +600V Tolerant to negative transient voltage dV/dt immune
• Gate drive supply range from 10 to 20V
• Undervoltage lockout for both channels
• 3.3V, 5V and 15V input logic compatible
• Cross-conduction prevention logic
• Matched propagation delay for both channels
• High side output in phase with IN input
• Logic and power ground +/- 5V offset.
• Internal 500ns dead-time, and programmable up to 5us with one external RDT resistor
• Lower di/dt gate driver for better noise immunity
• The dual function DT/SD pin input turns off both channels.
• Available in Lead-Free
Description
The IR21091(S) are high voltage, high speed power MOSFET and IGBT drivers with dependant high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction.
The logic input is compatible with standard CMOS or LSTTL output, down to 3.3V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver crossconduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 600 volts.
Product Summary
VOFFSET 600V max.
IO+/- 120 mA / 250 mA
VOUT 10 - 20V
ton/off (typ.) 680 & 170 ns
Dead time 500 ns
(programmable up to 5uS)
Absolute Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are absolute voltages referenced to COM. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Symbol | Definition | Min | Max | Units | |
VB | High side floating absolute voltage | -0.3 | 625 | V | |
VS | High side floating supply offset voltage | VB - 25 | VB + 0.3 | ||
VHO | High side floating output voltage | VS - 0.3 | VB + 0.3 | ||
VCC | Low side and logic fixed supply voltage | -0.3 | 25 | ||
VLO | Low side output voltage | -0.3 | VCC + 0.3 | ||
DT/SD | Programmable dead-time and shut-down pin voltage | VSS - 0.3 | VCC + 0.3 | ||
VIN | Logic input voltage | VSS - 0.3 | VCC + 0.3 | ||
dVS/dt | Allowable offset supply voltage transient | - | 50 | V/ns | |
PD | Package power dissipation @ TA ≤ +25°C | (8 Lead PDIP) | - | 1.0 | W |
(8 Lead SOIC) | - | 0.625 | |||
RthJA | Thermal resistance, junction to ambient | (8 Lead PDIP) | - | 125 | °C/W |
(8 Lead SOIC) | - | 200 | |||
TJ | Junction temperature | - | 150 | °C | |
TS | Storage temperature | -50 | 150 | ||
TL | Lead temperature (soldering, 10 seconds) | - | 300 |
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